In the capacity of the basic electrophysical factors which cause change of parameters and characteristics of
bipolar transistor structures, as well as other semiconductor devices under activity of pressure, biases of energy levels of the semiconductor, i.e.
The model RF3807 and model RF3809 are gallium arsenide heterojunction
bipolar transistor (GaAs HBT) pre-driver power amplifiers designed for cellular base station applications.
ANADIGICS, Inc., Warren, N.J., (Nasdaq: ANAD), a supplier of wireless and broadband solutions, has shipped its 25 millionth Indium Gallium Phosphide (InGaP) heterojunction
bipolar transistor (HBT) power amplifier (PA) for wireless LAN (WLAN) applications.
Other inventors don't get the kind of support from their organizations that one might expect: consider the case of Herbert Kroemer, who received a Nobel Prize in physics for the heterojunction
bipolar transistor. "In his official Nobel interview (about the discovery), Kroemer acknowledged that he was forced by his corporate bosses at the time to abandon his work and leave the application of this theory to someone else." Nothing like a little encouragement.
The divide-by-2 and divide-by-4 circuits were designed by BAE Systems and manufactured in Vitesse's second generation Indium Phosphide Heterojunction
Bipolar Transistor process (VIP-2(TM)).
"We have demonstrated light emission from the base layer of a heterojunction
bipolar transistor, and showed that the light intensity can be controlled by varying the base current," said Holonyak in a press release.
Engineering scientist Colombo Bolognesi and physicist Simon Watkins have created the world's fastest "double heterojunction
bipolar transistor", the name for a microscopic device that controls signals transmitted on optical fibres.
Two technologies instrumental in Dana receiving the honour were the company's Long(R) ThermaTEK insulated-gate
bipolar transistor cooling solutions and Long(R) battery cold plates.
It represents the circuit, which consists of bipolar two-collector magneticsensitive transistor VT1 and
bipolar transistor VT2 together with a R5C1-circuit, which implements an active inductive element.
Offered in three models--conventional, opportunity and rapid charge--the system runs on a high frequency insulated gate
bipolar transistor to generate a full load power factor of 0.95.